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AWT6276R
HELP PCS/WCDMA 3.4 V/29.5 dBm Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.4
TM
FEATURES
* * InGaP HBT Technology High Efficiency: 45 % @ POUT = +29.5 dBm 21 % @ POUT = +16 dBm 16 % @ POUT = +7 dBm * * * * * * * Low Quiescent Current: 15 mA Low Leakage Current in Shutdown Mode: <1 A VREF = +2.85 V (+2.75 V min over temp) Optimized for a 50 System Low Profile Miniature Surface Mount Package: 1.1 mm Max RoHS Compliant Package, 250 oC MSL-3 HSDPA Compliant (no backoff)
AWT6276R
M20 Package 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module
APPLICATIONS
* * Dual Band WCDMA Wireless Handsets Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6276 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm(R) 6275 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system.
GND at slug (pad) VCC RFIN GND
1 2 3 Bias Control 10 VCC 9 8 7 6
GND RFOUT GND GND
VMODE 4 VREF 5
Figure 1: Block Diagram
12/2005
AWT6276R
GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND
10 VCC 9 8 7 6 GND RFOUT GND GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN 1 2 3 4 5 6 7 8 9 10 NAME V CC RFIN GND VMODE VREF GND GND RFOUT GND V CC DESCRIPTION Supply Voltage RF Input Ground Mode Control Voltage Reference Voltage Ground Ground RF Output Ground Supply Voltage
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PRELIMINARY DATA SHEET - Rev 1.4 12/2005
AWT6276R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER Supply Voltage (VCC) Mode Control Voltage (VMODE) Reference Voltage (VREF) RF Input Power (PIN) Storage Temperature (TSTG)
MIN 0 0 0 -40
MAX +5 +3.5 +3.5 +10 +150
UNIT V V V dB m C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC) Reference Voltage (VREF) Mode Control Voltage (VMODE) RF Output Power (POUT) 3GPP HSDPA Case A HSDPA Case B HSDPA Case C Case Temperature (TC) MIN 1850 +3.2 +2.75 0 +2.3 0 +29.0 +28.0 +27.0 +26.5 -20
(1) (1) (1) (1)
TYP +3.4 +1.5 +2.85 +2.85 +29.5 +28.5 +27.5 +27.0 -
MAX 1910 +4.2 +2.95 +0.5 +3.1 +0.5 +110
(2)
UNIT MHz V V V
COMMENTS
POUT < +29.5 dBm POUT < 7 dBm PA "on" PA "shut down" Low Bias Mode High Bias Mode
dB m
1/15 < c/d < 12/15 13/15 < c/d < 15/8 15/7 < c/d < 15/0
C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB. (2) For operation at 110 oC (TC), POUT is derated by 1.0 dB.
PRELIMINARY DATA SHEET - Rev 1.4 12/2005
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AWT6276R Table 4: Electrical Specifications (TC = +25 C, VCC = +3.4 V, VREF = +2.85 V, 50 system)
PARAMETER MIN 24.5 14.0 13.0 40 18 13 TYP 27.0 16.0 15.0 -41 -40 -40 -56 -52 -58 45 21 16 15 4 0.3 <1 -137 -45 -50 MAX 29.0 18.0 17.0 -38 -38 -38 -48 -48 -48 22 7 1 5 -135 -35 -35 2:1 UNIT COMMENTS POUT = +29.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V POUT = +29.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V POUT = +29.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V POUT = +29.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V VMODE = +2.85 V, VCC = 3.4 V through VREF pin through VMODE pin, VMODE = +2.85 V VCC = +4.2 V, VREF = 0 V, VMODE = 0 V
Gain
dB
ACLR1 at 5 MHz offset
(1)
dB c
ACLR2 at 10 MHz offset
dB c
Power-Added Efficiency (1)
%
Quiescent Current (Icq) Reference Current Mode Control Current Leakage Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance
mA mA mA A
dBm/Hz 1930 MHz to 1990 MHz
dB c VSWR POUT < +29.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range
Spurious Output Level (all spurious outputs)
-
-
-70
dB c
Load mismatch stress with no permanent degradation or failure
10:1
-
-
VSWR
Notes: (1) ACLR and Efficiency measured at 1880 MHz.
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PRELIMINARY DATA SHEET - Rev 1.4 12/2005
AWT6276R
APPLICATION INFORMATION
To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to both the VREF and VMODE voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Three operating modes are recommended to optimize current consumption. High Bias operating mode is for POUT levels > 16 dBm. At POUT <16dBm, the PA should be "Mode Switched" to Low Bias Mode. For POUT levels < ~7 dBm, the VCC can be switched to 1.5 V (Low Bias Mode is also used for this POUT range).
Table 5: Bias Control
APPLICATION CDMA - low power CDMA - med power CDMA - high power Shutdown POUT LE V E LS <+7 dBm < +16 dBm >+16 dBm BIAS MODE Low Low High Shutdown V R EF VMODE V CC > +1.5 V
+2.85 V +2.85 V
+2.85 V +2.85 V +3.2 - 4.2 V +2.85 V 0V 0V 0V +3.2 - 4.2 V +3.2 - 4.2 V
VCC1
VCC2
C1 0.01F RF IN
1 2 3
VCC RFIN GND VMODE VREF
VCC GND RFOUT GND GND GND at slug
10 9 8 7 6
C3 0.01F
C4 2.2F ceramic
RF OUT
VMODE VREF
4 5
C2 0.01F
Figure 3: Application Circuit Schematic
PRELIMINARY DATA SHEET - Rev 1.4 12/2005
5
AWT6276R
PACKAGE OUTLINE
Figure 4: M20 Package Outline - 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module
76R
76R
Figure 5: Branding Specification 6
PRELIMINARY DATA SHEET - Rev 1.4 12/2005
AWT6276R
COMPONENT PACKAGING
Figure 7: Tape & Reel Packaging
Table 6: Tape & Reel Dimensions
PACKAGE TYPE 4 mm x 4 mm x 1.1 mm
TAPE WIDTH 12 mm
POCKET PITCH 8 mm
REEL CAPACITY 2500
MAX REEL DIA 13"
PRELIMINARY DATA SHEET - Rev 1.4 12/2005
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AWT6276R
ORDERING INFORMATION
ORDER NUMBER AWT6276RM20P8 TEMPERATURE RANGE -20 oC to +110 oC PACKAGE DESCRIPTION COMPONENT PACKAGING
RoHS Compliant 10 Pin 4 mm x 4 mm x 1.1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
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PRELIMINARY DATA SHEET - Rev 1.4 12/2005

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